Temperature effect on threshold voltage and optical property of twisted nematic liquid crystal with applied different voltages

In this paper, temperature-dependent birefringence theory of liquid crystal is used to investigate the temperature effect on the threshold voltage. An expression for describing the non-linear relationship between the threshold voltage and temperature is deduced. In addition, we theoretically discuss the temperature effect on the transmitted ratio of the namatic twisted liquid crystal without the applied voltage and with the applied voltage. It is found that the transmitted ratio is decreased linearly as temperature is increased when the liquid crystal is not applied with voltage, but the transmitted ratio is increased linearly as temperature is increased when the liquid crystal is applied with voltage. The threshold voltages and the transmitted ratio are measured at different temperatures. The experimental data are consistent with the theoretical calculated results.     

Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy

Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorphous insulators. In this study, through an ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold switching of amorphous NbO₂ accompanies local crystallization. The change in I–V characteristics after electroforming was examined by evaluating the concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO₂. The local crystallization in amorphous NbO₂ was validated by the observed difference in time-of-flight (ToF) between amorphous and crystalline NbO₂. We concluded that the slower ToF of amorphous NbO₂ (a-NbO₂) compared with crystalline NbO₂ (c-NbO₂) is due to the resistivity difference and trap-assisted recombination.     

QoS enhancement in OFDM based systems under transceiver impairments

Broadband wireless systems generally use orthogonal frequency division multiplexing (OFDM) with link adaptation (LA) to achieve high throughput while meeting bit error rate (BER) constraint. OFDM systems are known to be affected by non-linearity of high power amplifier (HPA) at transmitter, carrier frequency offset (CFO), symbol timing offset (STO) and channel estimation error at the receiver. The delay in feedback of channel state information (CSI) further affects the performance of LA procedures. The focus of this work is on performance analysis in presence of simultaneous affect of all these impairments on LA based OFDM systems. The results are found to be useful for threshold readjustment which is essential for successful implementation of LA scheme to counter the effects of change in operating conditions from ideal to as listed above.     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

Centered -discrepancy of random sampling and Latin hypercube design, and construction of uniform designs

In this paper properties and construction of designs under a centered version of the -discrepancy are analyzed. The theoretic expectation and variance of this discrepancy are derived for random designs and Latin hypercube designs. The expectation and variance of Latin hypercube designs are significantly lower than that of random designs. While in dimension one the unique uniform design is also a set of equidistant points, low-discrepancy designs in higher dimension have to be generated by explicit optimization. Optimization is performed using the threshold accepting heuristic which produces low discrepancy designs compared to theoretic expectation and variance.

     

熔石英介质中强紫外激光自聚焦效应研究

 针对脉冲宽度约1 ns、波长为351 nm的三倍频紫外激光，定量分析了熔石英介质中的自聚焦长度、峰值光强与强紫外激光光束质量及环境条件等因素的关系，研究了产生紫外光非线性自聚焦效应的阈值条件。研究结果表明：在强紫外激光光束质量一定的前提下，可将B积分值定义为自聚焦的阈值条件;入射强紫外激光光束质量越差，在熔石英介质中产生自聚焦的阈值条件越低;即使对于空间分布均匀的理想光束，当空气中存在灰尘时，经过一段距离的传输后，在熔石英介质中将导致强紫外激光自聚焦效应的产生，且灰尘尺寸较大时的自聚焦效应较明显,自聚焦的阈值条件也相对较低。     

Discrete threshold growth dynamics are omnivorous for box neighborhoods

In the discrete threshold model for crystal growth in the plane we begin with some set of seed crystals and observe crystal growth over time by generating a sequence of subsets of by a deterministic rule. This rule is as follows: a site crystallizes when a threshold number of crystallized points appear in the site's prescribed neighborhood. The growth dynamics generated by this model are said to be omnivorous if finite and imply . In this paper we prove that the dynamics are omnivorous when the neighborhood is a box (i.e. when, for some fixed , the neighborhood of is . This result has important implications in the study of the first passage time when is chosen randomly with a sparse Bernoulli density and in the study of the limiting shape to which converges.